Analysis of radiation effects of semiconductor devices based on numerical simulation Fermi–Dirac
To study the radiation effect of Fermi–Dirac (F–D) semiconductor devices based on numerical simulation, two methods are used. One is based on the combination of F–D statistical method and computer simulation. The method discusses the influence of temperature and light energy on the carrier number by...
| الحاوية / القاعدة: | Nonlinear Engineering |
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| المؤلفون الرئيسيون: | , , |
| التنسيق: | مقال |
| اللغة: | الإنجليزية |
| منشور في: |
De Gruyter
2022-07-01
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| الموضوعات: | |
| الوصول للمادة أونلاين: | https://doi.org/10.1515/nleng-2022-0020 |