Deep Neural Network Using Transfer Learning Technique for MOSFETs With Different Gate Lengths in Avalanche Region

In this paper, a transfer learning technique was first utilized to obtain deep neural network models for different gate lengths in the avalanche breakdown regime. Once the characteristics of a gate-length metal-oxide-semiconductor field-effect transistor are measured and the data are used to obtain...

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التفاصيل البيبلوغرافية

الحاوية / القاعدة:	IEEE Access
المؤلفون الرئيسيون:	Chie-In Lee, Shi-Yan Zhang, Shih-Chieh Li, Jia-Han Yang, Jian Cheng Su
التنسيق:	مقال
اللغة:	الإنجليزية
منشور في:	IEEE 2024-01-01
الموضوعات:	Transfer learning technique deep neural network metal-oxide-semiconductor field-effect transistor breakdown
الوصول للمادة أونلاين:	https://ieeexplore.ieee.org/document/10735156/