Patterning by Selective Etching of Poly-Silicon Using a High Etch Rate Single Sided Gaseous Process

This paper presents etching process developments using a single-side gaseous etch process based on the thermal reaction of poly-Silicon and the etching gas (molecular fluorine), that results in a high etching selectivity between layers, and a high etching rate. This work was carried out in the cont...

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Bibliographic Details

Published in:	SiliconPV Conference Proceedings
Main Authors:	Laurent Clochard, David Young, Mingzhe Yu, Ruy Sebastian Bonilla
Format:	Article
Language:	English
Published:	TIB Open Publishing 2024-12-01
Subjects:	TOPCon Patterning Etching Solar Cell Selectivity Dry Etching
Online Access:	https://www.tib-op.org/ojs/index.php/siliconpv/article/view/1317