Temperature influences of the interfacial layer in MOS (Pt/TiO2/Si) structures

In this paper present I-V and C-V electrical characteristics of MOS (Pt/TiO2/Si) were reported. In the I-V characteristics the various electric parameter estimated such as the ideality factor (n), barrier height (FB), leakage current (Ic) and saturation current (Io) were estimated and further analy...

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Bibliographic Details

Published in:	Конденсированные среды и межфазные границы
Main Authors:	H. D. Chandrashekara, P. Poornima
Format:	Article
Language:	English
Published:	Voronezh State University 2023-09-01
Subjects:	leakage current ideality factor flat band voltage oxide trapped charge
Online Access:	https://journals.vsu.ru/kcmf/article/view/11266