Distinct Lasing Operation From Chirped InAs/InP Quantum-Dash Laser

We study the enhanced inhomogeneity across the InAs quantum-dash (Qdash) layers by incorporating a chirped AlGaInAs barrier thickness in the InAs/InP laser structure. The lasing operation is investigated via Fabry-Pérot ridge-waveguide laser characterization, which shows a peculiar behav...

詳細記述

書誌詳細

出版年:	IEEE Photonics Journal
主要な著者:	M. Z. M. Khan, T. K. Ng, Chi-Sen Lee, D. H. Anjum, D. Cha, P. Bhattacharya, B. S. Ooi
フォーマット:	論文
言語:	英語
出版事項:	IEEE 2013-01-01
主題:	Semiconductor lasers semiconductor quantum dots quantum dash lasers self-assembled quantum dot inhomogeneous broadening
オンライン･アクセス:	https://ieeexplore.ieee.org/document/6557428/