Strain-controlled Rashba spin-orbit coupling effect in SnS and SnSe monolayers

The miniaturization of transistors and the high density of integrated circuits makes conventional transistors reach a size limit, causing leakage currents, unstable performance, and increasing production cost. Spin field effect transistors (SFETs) based on spintronics use electron spin as an informa...

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Bibliographic Details

Published in:	Materials & Design
Main Authors:	Jinhao Su, Xiting Wang, Chen Shao, Yuzheng Guo, Lede Xian
Format:	Article
Language:	English
Published:	Elsevier 2021-11-01
Subjects:	Rashba spin-orbit coupling effect SnS monolayer SnSe monolayer Strain First-principles calculations
Online Access:	http://www.sciencedirect.com/science/article/pii/S0264127521005608