Reduced Electron Temperature in Silicon Multi-Quantum-Dot Single-Electron Tunneling Devices

The high-performance room-temperature-operating Si single-electron transistors (SETs) were devised in the form of the multiple quantum-dot (MQD) multiple tunnel junction (MTJ) system. The key device architecture of the Si MQD MTJ system was self-formed along the volumetrically undulated [110] Si nan...

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Bibliographic Details

Published in:	Nanomaterials
Main Authors:	Youngmin Lee, So Hyun Lee, Hyo Seok Son, Sejoon Lee
Format:	Article
Language:	English
Published:	MDPI AG 2022-02-01
Subjects:	quantum dot single-electron transistor Coulomb blockade charge stability effective electron temperature
Online Access:	https://www.mdpi.com/2079-4991/12/4/603