The Switching Characteristics in Bilayer ZnO/HfO₂ Resistive Random-Access Memory, Depending on the Top Electrode

In this study, the bipolar switching behaviors in ZnO/HfO₂ bilayer resistive random-access memory (RRAM), depending on different metal top electrodes (TE), are analyzed. For this purpose, devices with two types of TE–TiN/Ti and Pd, which have varying oxygen affinities, are fab...

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出版年:	Electronic Materials
主要な著者:	So-Yeon Kwon, Woon-San Ko, Jun-Ho Byun, Do-Yeon Lee, Hi-Deok Lee, Ga-Won Lee
フォーマット:	論文
言語:	英語
出版事項:	MDPI AG 2024-06-01
主題:	switching characteristics ZnO/HfO<sub>2</sub> bilayer stability resistive random-access memory (RRAM)
オンライン･アクセス:	https://www.mdpi.com/2673-3978/5/2/6