Investigation of Nitridation on the Band Alignment at MoS2/HfO2 Interfaces

Abstract The effect of nitridation treatment on the band alignment between few-layer MoS2 and HfO2 has been investigated by X-ray photoelectron spectroscopy. The valence (conduction) band offsets of MoS2/HfO2 with and without nitridation treatment were determined to be 2.09 ± 0.1 (2.41 ± 0.1) and 2....

وصف كامل

التفاصيل البيبلوغرافية
الحاوية / القاعدة:Nanoscale Research Letters
المؤلفون الرئيسيون: Ya-Wei Huan, Wen-Jun Liu, Xiao-Bing Tang, Xiao-Yong Xue, Xiao-Lei Wang, Qing-Qing Sun, Shi-Jin Ding
التنسيق: مقال
اللغة:الإنجليزية
منشور في: SpringerOpen 2019-05-01
الموضوعات:
Nitridation treatment
Band alignment
Few-layer MoS2
الوصول للمادة أونلاين:http://link.springer.com/article/10.1186/s11671-019-3020-0

الانترنت

http://link.springer.com/article/10.1186/s11671-019-3020-0

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