Post Thermal Oxidation of Tin Thin Film on Silicon Substrate for MIS Hetrojunction Prepared by Thermal Evaporation
In this work, preparation of high quality conductive oxide SnO2 thin film by post-thermal trearment of deposited tin by vacuum thermal evaporation on glass and p -type silicon substratesfor preparation of metal-insulator-semiconductor hetrojunction. The opticalabsorption, electrical, structural and...
| 出版年: | Engineering and Technology Journal |
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| 第一著者: | |
| フォーマット: | 論文 |
| 言語: | 英語 |
| 出版事項: |
Unviversity of Technology- Iraq
2016-04-01
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| 主題: | |
| オンライン･アクセス: | https://etj.uotechnology.edu.iq/article_116206_7a5ef31973dc87bb91730198fed0eabb.pdf |