Mobility Enhancement in Amorphous In-Ga-Zn-O Thin-Film Transistor by Induced Metallic in Nanoparticles and Cu Electrodes

In this work, we fabricated a high-mobility amorphous indium-gallium-zinc-oxide (a-IGZO) thin-film transistor (TFT) based on alumina oxide (Al 2 O 3 ) passivation layer (PVL) and copper (Cu) source/drain electrodes (S/D). The mechanism of the high mobility for a-IGZO TFT was proposed a...

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Bibliographic Details

Published in:	Nanomaterials
Main Authors:	Shiben Hu, Honglong Ning, Kuankuan Lu, Zhiqiang Fang, Yuzhi Li, Rihui Yao, Miao Xu, Lei Wang, Junbiao Peng, Xubing Lu
Format:	Article
Language:	English
Published:	MDPI AG 2018-03-01
Subjects:	IGZO thin film transistors indium copper Schottky contact
Online Access:	http://www.mdpi.com/2079-4991/8/4/197