Ru/Ta bilayer approach to EUV mask absorbers: Experimental patterning and simulated imaging perspective

The optical properties and geometry of EUV mask absorbers play an essential role in determining the imaging performance of a mask in EUV lithography. Imaging metrics, including Normalized Image Log Slope (NILS), Telecentricity Error (TCE), and Best Focus Variation (BFV) through pitch deteriorate bec...

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Bibliographic Details

Published in:	Micro and Nano Engineering
Main Authors:	Devesh Thakare, Jean-François de Marneffe, Annelies Delabie, Vicky Philipsen
Format:	Article
Language:	English
Published:	Elsevier 2023-09-01
Subjects:	EUV lithography EUV photomasks EUV absorbers Bi-layer patterning Rigorous imaging simulations M3D
Online Access:	http://www.sciencedirect.com/science/article/pii/S2590007223000539