Comprehensive Short Circuit Behavior and Failure Analysis of 1.2kV SiC MOSFETs Across Multiple Vendors and Generations

Silicon Carbide (SiC) MOSFETs have gained significant attention in power electronics for their superior characteristics. Despite advances in 1.2kV SiC MOSFET generations, a comprehensive comparative analysis of different device types remains limited. This study examines the short-circuit (SC) behavi...

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Bibliographic Details

Published in:	IEEE Access
Main Authors:	Shahid Makhdoom, Na Ren, Ce Wang, Chaobiao Lin, Yiding Wu, Kuang Sheng
Format:	Article
Language:	English
Published:	IEEE 2024-01-01
Subjects:	Failure mechanisms short-circuit (SC) robustness silicon carbide (SiC) MOSFETs SiC planar MOSFET SiC trench MOSFET SiC MOSFET generations
Online Access:	https://ieeexplore.ieee.org/document/10759625/