Simulation Study on Dynamic and Static Characteristics of Novel SiC Gate-Controlled Bipolar-Field-Effect Composite Transistor

In this article, a novel bipolar-field-effect composite power transistor, called SiC GCBT (Silicon Carbide Gate-Controlled Bipolar-field-effect Composite Transistor) is presented and studied. The structure is characterized by the use of the base-gate short connection mode, instead of the conventiona...

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Bibliographic Details
Published in:IEEE Journal of the Electron Devices Society
Main Authors: Yipan Zhang, Baoxing Duan, Yintang Yang
Format: Article
Language:English
Published: IEEE 2020-01-01
Subjects:
SiC power device
IGBT
VDMOS
bipolar
on-state current
breakdown voltage
Online Access:https://ieeexplore.ieee.org/document/9187934/

Internet

https://ieeexplore.ieee.org/document/9187934/

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