Interband Photoconductivity of Metamorphic InAs/InGaAs Quantum Dots in the 1.3–1.55-μm Window

Abstract Photoelectric properties of the metamorphic InAs/In x Ga1 − x As quantum dot (QD) nanostructures were studied at room temperature, employing photoconductivity (PC) and photoluminescence spectroscopies, electrical measurements, and theoretical modeling. Four samples with different stoichiome...

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Bibliographic Details
Published in:Nanoscale Research Letters
Main Authors: Sergii Golovynskyi, Oleksandr I. Datsenko, Luca Seravalli, Giovanna Trevisi, Paola Frigeri, Ivan S. Babichuk, Iuliia Golovynska, Junle Qu
Format: Article
Language:English
Published: SpringerOpen 2018-04-01
Subjects:
Nanostructure
Quantum dot
Metamorphic
InAs/InGaAs
Photoconductivity
Photoluminescence
Online Access:http://link.springer.com/article/10.1186/s11671-018-2524-3

Internet

http://link.springer.com/article/10.1186/s11671-018-2524-3

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