Band structure of Ge1−xSnx alloy: a full-zone 30-band k · p model
A full-zone 30-band k · p model is developed as an efficient and reliable tool to compute electronic band structure in Ge _1− _x Sn _x alloy. The model was first used to reproduce the electronic band structures in Ge and α -Sn obtained with empirical tight binding and ab initio methods. Input parame...
| 出版年: | New Journal of Physics |
|---|---|
| 主要な著者: | , , , , , , |
| フォーマット: | 論文 |
| 言語: | 英語 |
| 出版事項: |
IOP Publishing
2019-01-01
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| 主題: | |
| オンライン・アクセス: | https://doi.org/10.1088/1367-2630/ab306f |
