A novel ultra-steep subthreshold swing iTFET with control gate and control source biasing
Abstract In this paper, we propose a novel structure with Control Source and Control Gate structured tunnel field-effect transistor (CSCG‑iTFET), which achieves an unprecedentedly steep subthreshold swing (SS) while maintaining high ON-state current ( $$\:{I}_{\text{O}\text{N}}$$ ). In addition, usi...
| Published in: | Scientific Reports |
|---|---|
| Main Authors: | , |
| Format: | Article |
| Language: | English |
| Published: |
Nature Portfolio
2025-08-01
|
| Subjects: | |
| Online Access: | https://doi.org/10.1038/s41598-025-13011-5 |