Research progress on phase structure regulation of hafnium oxide-based ferroelectric thin films

With the development of microelectronics technology, hafnium oxide (HfO2) has become the research focus of new ferroelectric materials because of its compatibility with Si-based semiconductor technology, suitable relative dielectric constant, good thermal and chemical stabilities, and a large band g...

Full description

Bibliographic Details

Published in:	工程科学学报
Main Authors:	Yan LI, Yuanyuan GUO, Hailong LIANG, Jianting ZHANG, Xinggang WANG, Shuqi LIU, Ning XIN
Format:	Article
Language:	Chinese
Published:	Science Press 2024-04-01
Subjects:	hafnium oxide ferroelectric film phase regulation oxygen vacancy film thickness
Online Access:	http://cje.ustb.edu.cn/article/doi/10.13374/j.issn2095-9389.2023.05.10.003