High Performance GaSb-Based DBR Laser with On-Chip Integrated Power Amplifier via Gain-Match Design

We reported on a single-longitudinal-mode operated distributed Bragg reflector laser diode emitting at 1950 nm with an on-chip integrated power amplifier. Second-order Chromium–Bragg gratings are carefully designed and fabricated at the end of the ridge waveguide. Achieving a stable single-mode oper...

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Bibliographic Details

Published in:	Applied Sciences
Main Authors:	Juntian Cao, Chengao Yang, Yihang Chen, Hongguang Yu, Jianmei Shi, Haoran Wen, Zhengqi Geng, Zhiyuan Wang, Hao Tan, Yu Zhang, Donghai Wu, Yingqiang Xu, Haiqiao Ni, Zhichuan Niu
Format:	Article
Language:	English
Published:	MDPI AG 2024-12-01
Subjects:	GaSb-based diode lasers single-longitudinal mode distributed Bragg reflector power amplifier
Online Access:	https://www.mdpi.com/2076-3417/15/1/41