An ab Initio Calculations of Single-Electron Transistor Based Single Walled Carbon Nanotube of Ultra-Small Diameter
In this paper, we have investigated the charge stability diagram and conductance dependence on source drain bias and gate voltage of carbon nanotube based single electron transistor (SET) by using first principle calculations. All calculations have been executed by using ATK-VNL simulation package b...
| Published in: | East European Journal of Physics |
|---|---|
| Main Authors: | , |
| Format: | Article |
| Language: | English |
| Published: |
V.N. Karazin Kharkiv National University Publishing
2020-04-01
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| Subjects: | |
| Online Access: | https://periodicals.karazin.ua/eejp/article/view/15546 |
