Two-step deposition of Al-doped ZnO on p-GaN to form ohmic contacts
Abstract Al-doped ZnO (AZO) thin films were deposited directly on p-GaN substrates by using a two-step deposition consisting of polymer assisted deposition (PAD) and atomic layer deposition (ALD) methods. Ohmic contacts of the AZO on p-GaN have been formed. The lowest sheet resistance of the two-ste...
| 出版年: | Nanoscale Research Letters |
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| 主要な著者: | , , , , , |
| フォーマット: | 論文 |
| 言語: | 英語 |
| 出版事項: |
SpringerOpen
2017-07-01
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| 主題: | |
| オンライン･アクセス: | http://link.springer.com/article/10.1186/s11671-017-2239-x |