Design and Realization of a High-Q Grounded Tunable Active Inductor for 5G NR (FR1) Transceiver Front-End Applications

This paper presents a wide-tuning-range, low-power tunable active inductor (AI) designed and fabricated using 130 nm CMOS technology with six metal layers. To achieve high performance with a relatively small silicon area and low power consumption, the AI structure is carefully designed and optimized...

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Bibliographic Details

Published in:	Sensors
Main Authors:	Sehmi Saad, Aymen Ben Hammadi, Fayrouz Haddad
Format:	Article
Language:	English
Published:	MDPI AG 2025-05-01
Subjects:	grounded active inductor wide tuning range radio frequency CMOS
Online Access:	https://www.mdpi.com/1424-8220/25/10/3070