Vertical and Lateral Etch Survey of Ferroelectric AlN/Al_1−xSc_xN in Aqueous KOH Solutions

Due to their favorable electromechanical properties, such as high sound velocity, low dielectric permittivity and high electromechanical coupling, Aluminum Nitride (AlN) and Aluminum Scandium Nitride (Al_1−xSc_xN) thin films have achieved widespread applic...

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Bibliographic Details

Published in:	Micromachines
Main Authors:	Zichen Tang, Giovanni Esteves, Jeffrey Zheng, Roy H. Olsson
Format:	Article
Language:	English
Published:	MDPI AG 2022-07-01
Subjects:	aluminum scandium nitride (AlScN) aluminum nitride (AlN) wet etch potassium hydroxide (KOH) ferroelectric
Online Access:	https://www.mdpi.com/2072-666X/13/7/1066