Influence of O₂ Flow Rate on the Properties of Ga₂O₃ Growth by RF Magnetron Sputtering

The influence of the O₂ flow rate on the properties of gallium oxide (Ga₂O₃) by RF magnetron sputtering was studied. X-ray diffraction (XRD), atomic force microscopy (AFM), scanning electron microscopy (SEM), transmittance spectra,...

Full description

Bibliographic Details

Published in:	Micromachines
Main Authors:	Dengyue Li, Hehui Sun, Tong Liu, Hongyan Jin, Zhenghao Li, Yaxin Liu, Donghao Liu, Dongbo Wang
Format:	Article
Language:	English
Published:	MDPI AG 2023-01-01
Subjects:	Ga<sub>2</sub>O<sub>3</sub> O<sub>2</sub> flow rate magnetron sputtering
Online Access:	https://www.mdpi.com/2072-666X/14/2/260