Capacitance and Conductance Compensation Methods for Efficient Computing‐In‐Memory Designs

Abstract Compensation has been a common while unacknowledged strategy in the design of computing‐in‐memory (CIM) schemes. It enables efficient CIM designs by intentionally letting the sum of capacitances or conductances of two or more rows or columns in the memory array equal, thus resulting in a co...

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Bibliographic Details

Published in:	Advanced Electronic Materials
Main Authors:	Yubiao Luo, Fei Qiao, Zhong Sun
Format:	Article
Language:	English
Published:	Wiley-VCH 2024-12-01
Subjects:	capacitance compensation computing‐in‐memory conductance compensation resistive memory SRAM
Online Access:	https://doi.org/10.1002/aelm.202400452