On the origin of off-state leakage current in n-p-n vertical structures for GaN-based trench-MOSFETs

In this work, we present the results of research on the off-current mechanism in vertical trench MOS devices manufactured on an ammonothermal substrate. Transistors and npn diode test structures were characterized electrically as well as by SEM and by AFM, which results compared to CAD simulations....

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Bibliographic Details

Published in:	Power Electronic Devices and Components
Main Authors:	Maciej Kamiński, Kamil Abendroth, Aneta Gołębiowska, Aleksander Szczepański, Krzysztof Urbanowski, Ernest Brzozowski, Jarosław Tarenko, Oskar Sadowski, Justyna Wierzbicka, Renata Kruszka, Kamil Kosiel, Joanna Jankowska-Śliwińska, Iwona Jóźwik, Anna Szerling, Krystian Król, Paweł Prystawko, Michał Boćkowski, Izabella Grzegory, Andrzej Taube
Format:	Article
Language:	English
Published:	Elsevier 2025-06-01
Subjects:	Vertical GaN Power devices Trench MOSFET Breakdown voltage Off-current of the GaN transistor
Online Access:	http://www.sciencedirect.com/science/article/pii/S2772370425000112