Temperature-Dependent Carrier Transport in GaN Nanowire Wrap-Gate Transistor

For the creation of next-generation nanoscale devices, it is crucial to comprehend the carrier transport mechanisms in nanowires. Here, we examine how temperature affects the properties of GaN nanowire wrap-gate transistors (WGTs), which are made via a top-down technique. The predicted conductance i...

Full description

Bibliographic Details
Published in:Nanomaterials
Main Authors: Siva Pratap Reddy Mallem, Peddathimula Puneetha, Yeojin Choi, Seung Mun Baek, Sung Jin An, Ki-Sik Im
Format: Article
Language:English
Published: MDPI AG 2023-05-01
Subjects:
wrap-gate transistor
nanowire
GaN
surface/core
carrier scattering
Online Access:https://www.mdpi.com/2079-4991/13/10/1629

Internet

https://www.mdpi.com/2079-4991/13/10/1629

Similar Items