Preparation and properties of intermetallic-bonded diamond grinding wheel for thinning SiC wafer

Objectives: Compared with Si-based materials, SiC has become an ideal substrate material for chip manufacturing due to its good thermal conductivity, high breakdown electric field strength, and large bandgap width. However, the Mohs hardness of SiC wafer is as high as 9.5, which makes it difficult t...

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Bibliographic Details

Published in:	Jin'gangshi yu moliao moju gongcheng
Main Authors:	Shuaipeng CHEN, Keqiao HE, Xiyue KANG, Yuehui HE, Yuzhang CHEN
Format:	Article
Language:	Chinese
Published:	Zhengzhou Research Institute for Abrasives & Grinding Co., Ltd. 2024-12-01
Subjects:	intermetallic compound diamond grinding wheel sic wafer grinding quality
Online Access:	http://www.jgszz.cn/article/doi/10.13394/j.cnki.jgszz.2023.0250