Prototypes of Highly Effective Stress Balancing AlN Interlayers in MOVPE GaN-on-Si (111)

The GaN-on-Si virtual substrate is now an indispensable platform for the application of GaN in the fields of power devices, radio frequency, light-emitting devices, etc. Such applications are still in need of more effective stress balancing techniques to achieve higher quality and stress balance in...

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書誌詳細

出版年:	Inorganics
主要な著者:	Cai Liu, Gaomin Li, Hassanet Sodabanlu, Masakazu Sugiyama, Yoshiaki Nakano
フォーマット:	論文
言語:	英語
出版事項:	MDPI AG 2025-09-01
主題:	stress balancing AlN interlayer metalorganic vapor phase epitaxy GaN-on-Si
オンライン･アクセス:	https://www.mdpi.com/2304-6740/13/9/302