High Efficiency Deep Ultraviolet Light-Emitting Diodes With Polarity Inversion of Hole Injection Layer

In this work, we investigate the performance improvement of N-polar AlGaN-based deep ultraviolet light-emitting diodes (DUV LEDs) by the inversion of the hole injection layer from N-polar to Ga-polar. The influence of different inversion points on the performance and the energy band of DUV LED is sy...

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Bibliographic Details
Published in:IEEE Photonics Journal
Main Authors: Xu Liu, Shengrui Xu, Hongchang Tao, Yanrong Cao, Xinhao Wang, Hengsheng Shan, Jincheng Zhang, Yue Hao
Format: Article
Language:English
Published: IEEE 2023-01-01
Subjects:
Online Access:https://ieeexplore.ieee.org/document/10049627/