Structural and electronic properties of manganese-doped Bi2Te3 epitaxial layers

We show that in manganese-doped topological insulator bismuth telluride layers, Mn atoms are incorporated predominantly as interstitials in the van der Waals gaps between the quintuple layers and not substitutionally on Bi sites within the quintuple layers. The structural properties of epitaxial lay...

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Bibliographic Details

Published in:	New Journal of Physics
Main Authors:	J Růžička, O Caha, V Holý, H Steiner, V Volobuiev, A Ney, G Bauer, T Duchoň, K Veltruská, I Khalakhan, V Matolín, E F Schwier, H Iwasawa, K Shimada, G Springholz
Format:	Article
Language:	English
Published:	IOP Publishing 2015-01-01
Subjects:	topological insulators thin layers EXAFS ARPES 61.05.C- 68.55.-a
Online Access:	https://doi.org/10.1088/1367-2630/17/1/013028