Electron–phonon processes of the silicon-vacancy centre in diamond

We investigate phonon induced electronic dynamics in the ground and excited states of the negatively charged silicon-vacancy ( ${\rm Si}{{{\rm V}}^{-}}$ ) centre in diamond. Optical transition line widths, transition wavelength and excited state lifetimes are measured for the temperature range 4 K–3...

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Bibliographic Details

Published in:	New Journal of Physics
Main Authors:	Kay D Jahnke, Alp Sipahigil, Jan M Binder, Marcus W Doherty, Mathias Metsch, Lachlan J Rogers, Neil B Manson, Mikhail D Lukin, Fedor Jelezko
Format:	Article
Language:	English
Published:	IOP Publishing 2015-01-01
Subjects:	diamond colour center silicon vacancy phonon relaxation time temperature
Online Access:	https://doi.org/10.1088/1367-2630/17/4/043011