Enhanced resistive switching performance in bilayer Pt/TiO2/Co3O4/Pt memory device

In this work, the bilayer Pt/TiO _2 /Co _3 O _4 /Pt and single-layer Pt/TiO _2 /Pt memory devices were fabricated for investigating their resistive switching characteristics. The statistical switching parameters revealed the enhanced resistive switching performance in the bilayer Pt/TiO _2 /Co _3 O...

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Bibliographic Details
Published in:Materials Research Express
Main Authors: Lilan Zou, Jianmei Shao, Dinghua Bao
Format: Article
Language:English
Published: IOP Publishing 2021-01-01
Subjects:
resistive switching
bilayer structure
conductive mechanism
Online Access:https://doi.org/10.1088/2053-1591/abd730

Internet

https://doi.org/10.1088/2053-1591/abd730

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