Research on Internal Current Sharing of High-power IGBTs

In order to increase the rating current level of device, high power IGBT is often composed of multiple chips and subelements in parallel, and in this case, how to effectively control the current sharing within device is very important. It analysed the important influence of stray inductance on IGBTs...

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Bibliographic Details

Published in:	Kongzhi Yu Xinxi Jishu
Main Authors:	YU Wei, LUO Haihui, DENG Jianghui, ZHOU Wangjun, JIANG Pusheng, WU Yudong
Format:	Article
Language:	Chinese
Published:	Editorial Office of Control and Information Technology 2017-01-01
Subjects:	IGBT parallel current sharing IGBT chip parameter parasitic parameter
Online Access:	http://ctet.csrzic.com/thesisDetails#10.13889/j.issn.2095-3631.2017.05.007