Physics-Based TCAD Simulation and Calibration of 600 V GaN/AlGaN/GaN Device Characteristics and Analysis of Interface Traps

This study proposes an analysis of the physics-based TCAD (Technology Computer-Aided Design) simulation procedure for GaN/AlGaN/GaN HEMT (High Electron Mobility Transistor) device structures grown on Si (111) substrate which is calibrated against measurement data. The presence of traps and activatio...

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Bibliographic Details

Published in:	Micromachines
Main Authors:	Yu-Lin Song, Manoj Kumar Reddy, Luh-Maan Chang, Gene Sheu
Format:	Article
Language:	English
Published:	MDPI AG 2021-06-01
Subjects:	GaN/AlGaN/GaN HEMT TCAD traps
Online Access:	https://www.mdpi.com/2072-666X/12/7/751