Ferroelectric switching of quantum anomalous Hall effects in MnBi2Te4 films
Abstract The integration of ferroelectric and topological materials offers a promising avenue for advancing the development of quantum material devices. In this work, we explore the strong coupling between topological states and ferroelectricity in the heterostructure formed by interfacing MnBi2Te4...
| 出版年: | npj Quantum Materials |
|---|---|
| 主要な著者: | , , |
| フォーマット: | 論文 |
| 言語: | 英語 |
| 出版事項: |
Nature Portfolio
2025-08-01
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| オンライン・アクセス: | https://doi.org/10.1038/s41535-025-00800-4 |
