A 120–150 GHz Power Amplifier in 28-nm CMOS Achieving 21.9-dB Gain and 11.8-dBm P<sub>sat</sub> for Sub-THz Imaging System
This paper presents a high-gain D-band power amplifier (PA) fabricated with 28-nm CMOS technology for a sub-terahertz frequency modulated continuous wave imaging system. It adopts two-channel power combining using artificial transmission lines to absorb the parasitic capacitance of the ground-signal...
| Published in: | IEEE Access |
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| Main Authors: | , , , , , |
| Format: | Article |
| Language: | English |
| Published: |
IEEE
2021-01-01
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| Subjects: | |
| Online Access: | https://ieeexplore.ieee.org/document/9432813/ |