Electrical properties of n-type GaSb substrates and p-type GaSb buffer layers for InAs/InGaSb superlattice infrared detectors

Lightly doped n-type GaSb substrates with p-type GaSb buffer layers are the preferred templates for growth of InAs/InGaSb superlattices used in infrared detector applications because of relatively high infrared transmission and a close lattice match to the superlattices. We report here temperature d...

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Bibliographic Details

Published in:	AIP Advances
Main Authors:	W. C. Mitchel, S. Elhamri, H. J. Haugan, R. Berney, Shin Mou, G. J. Brown
Format:	Article
Language:	English
Published:	AIP Publishing LLC 2015-09-01
Online Access:	http://dx.doi.org/10.1063/1.4932208