Dual Material Pile Gate Approach for Low Leakage Finfet
FinFET (Fin Field-Effect Transistor) technology has recently seen a major increase in adoption for use in integrated circuits because of its high immunity to short channel effects and its further ability to scale down. Previously, a major research contribution was made to reduce the leakage curr...
| Published in: | International Journal of Technology |
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| Main Authors: | , |
| Format: | Article |
| Language: | English |
| Published: |
Universitas Indonesia
2017-01-01
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| Subjects: | |
| Online Access: | http://ijtech.eng.ui.ac.id/article/view/236 |