Reconfigurable Logic‐In‐Memory Cell Comprising Triple‐Gated Feedback Field‐Effect Transistors

Abstract A reconfigurable logic‐in‐memory (R‐LIM) cell performs logic‐in‐memory functions as well as reconfigurable logic gates. The R‐LIM cell is constructed with triple‐gated (TG) feedback field‐effect transistors (FBFETs) that are reconfigured in n‐channel or p‐channel modes via electrostatic dop...

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Bibliographic Details

Published in:	Advanced Electronic Materials
Main Authors:	Jongseong Han, Jaemin Son, Juhee Jeon, Yunwoo Shin, Kyoungah Cho, Sangsig Kim
Format:	Article
Language:	English
Published:	Wiley-VCH 2023-12-01
Subjects:	logic‐in‐memory positive feedback loops reconfigurable logic gates reconfigurable logic‐in‐memory cells triple‐gated feedback field‐effect transistors
Online Access:	https://doi.org/10.1002/aelm.202300526