Gate reliability enhancement of p-GaN gate HEMTs with oxygen compensation technique

Improved p -GaN gate reliability is achieved through a simple oxygen compensation technique (OCT), which involves oxygen plasma treatment after gate opening and subsequential wet etching. The OCT compensates for the Mg acceptors near the p -GaN surface, leading to an extended depletion region under...

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Bibliographic Details

Published in:	Applied Physics Express
Main Authors:	Chengcai Wang, Junting Chen, Zuoheng Jiang, Haohao Chen
Format:	Article
Language:	English
Published:	IOP Publishing 2024-01-01
Subjects:	HEMT p-GaN gate reliability time-dependent gate breakdown gallium nitride
Online Access:	https://doi.org/10.35848/1882-0786/ad4088