Ampere-class double pulse testing of half-inch H-terminated diamond MOSFET chip

400 metal-oxide-semiconductor field-effect transistors (MOSFETs) were fabricated on a half-inch diamond substrate. The performance of each device was evaluated, and an H-terminated diamond MOSFET chip was created by connecting over 300 of the well performing MOSFETs in parallel, resulting in a gate...

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Bibliographic Details

Published in:	Applied Physics Express
Main Authors:	Keita Takaesu, Daisuke Sano, Iku Ota, Keiko Otsuka, Daisuke Takeuchi, Toshiharu Makino, Hitoshi Umezawa
Format:	Article
Language:	English
Published:	IOP Publishing 2025-01-01
Subjects:	diamond power device double pulse testing MOSFET
Online Access:	https://doi.org/10.35848/1882-0786/adba3a