Methodology to Investigate Impact of Grain Orientation on Threshold Voltage and Current Variability in Tunneling Field-Effect Transistors
In this article, an investigation has been performed to statistically analyze the entire subthreshold characteristics of tunnel field-effect transistor (TFET) depending on a gate work function variation (WFV). Firstly, the current variations are evaluated through turn-on voltage (V<sub>ON</...
| 出版年: | IEEE Journal of the Electron Devices Society |
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| 主要な著者: | , , , , |
| フォーマット: | 論文 |
| 言語: | 英語 |
| 出版事項: |
IEEE
2020-01-01
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| 主題: | |
| オンライン･アクセス: | https://ieeexplore.ieee.org/document/9238013/ |