Random ferroelectric and dielectric phase distribution-induced device variation of negative capacitance field-effect transistors

Negative-capacitance field-effect transistors (NC-FETs) are significantly affected by their ferroelectric (FE)/dielectric (DE) phase configurations owing to the uncertainty of their crystalline phases. This study presents an analysis of random FE/DE grain distribution-induced variations from multipl...

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Bibliographic Details

Published in:	Results in Physics
Main Authors:	Weifeng Lü, Dengke Chen, Caiyun Zhang, Weijie Wei, Ying Han
Format:	Article
Language:	English
Published:	Elsevier 2023-04-01
Subjects:	Negative capacitance field-effect transistor Crystalline phase Random variations Ferroelectric/dielectric grain
Online Access:	http://www.sciencedirect.com/science/article/pii/S221137972300181X