An Accurate Electrical and Thermal Co-Simulation Framework for Modeling High-Temperature DC and Pulsed I - V Characteristics of GaN HEMTs

High-electron mobility transistors (HEMTs) employing AlGaN/GaN heterostructures are suitable for high-power and high-frequency applications. To meet target specifications, GaN HEMTs must be designed and optimized by accurately considering the coupling of electrical and thermal characteristics, from...

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Bibliographic Details

Published in:	IEEE Journal of the Electron Devices Society
Main Authors:	Yicong Dong, Eiji Yagyu, Takashi Matsuda, Koon Hoo Teo, Chungwei Lin, Shaloo Rakheja
Format:	Article
Language:	English
Published:	IEEE 2025-01-01
Subjects:	Gallium nitride HEMTs thermodynamic transport TCAD simulations drain-current transients
Online Access:	https://ieeexplore.ieee.org/document/10836823/