APA (7th ed.) Citation

Dong, Y., Yagyu, E., Matsuda, T., Teo, K. H., Lin, C., & Rakheja, S. (2025, January). An Accurate Electrical and Thermal Co-Simulation Framework for Modeling High-Temperature DC and Pulsed I - V Characteristics of GaN HEMTs. IEEE Journal of the Electron Devices Society.

Chicago Style (17th ed.) Citation

Dong, Yicong, Eiji Yagyu, Takashi Matsuda, Koon Hoo Teo, Chungwei Lin, and Shaloo Rakheja. "An Accurate Electrical and Thermal Co-Simulation Framework for Modeling High-Temperature DC and Pulsed I - V Characteristics of GaN HEMTs." IEEE Journal of the Electron Devices Society Jan. 2025.

MLA (9th ed.) Citation

Dong, Yicong, et al. "An Accurate Electrical and Thermal Co-Simulation Framework for Modeling High-Temperature DC and Pulsed I - V Characteristics of GaN HEMTs." IEEE Journal of the Electron Devices Society, Jan. 2025.