Staggered band alignment of n-Er2O3/p-Si heterostructure for the fabrication of a high-performance broadband photodetector

The low responsivity of conventional Silicon photodiodes in ultraviolet and near-infrared regimes restricts their utility as broadband photodetectors (BBPDs). Despite ongoing investigations into various p-n heterostructures for Silicon-based BBPDs, challenges such as high dark current (I _dark ), lo...

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Bibliographic Details

Published in:	Nano Express
Main Authors:	Anupam Ghosh, Riya Wadhwa, Shivani, Sonia Deswal, Pradeep Kumar, Mukesh Kumar
Format:	Article
Language:	English
Published:	IOP Publishing 2024-01-01
Subjects:	electronic material erbium oxide thin film heterojunction broadband photodetector
Online Access:	https://doi.org/10.1088/2632-959X/ad5d81