Fabrication of β-Ga2O3/air-gap structures on (001) β-Ga2O3 using HCl gas etching

β-Ga2O3/air-gap structures were fabricated on (001) substrates via crystallographic etching with HCl gas. Etching at 650 °C under an HCl partial pressure of 250 Pa resulted in a vertical etch rate of 0.10 μm/min on the (001) plane and a lateral etch rate of 0.70 μm/min along the < 010 > direct...

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Bibliographic Details

Published in:	Science and Technology of Advanced Materials: Methods
Main Authors:	Takayoshi Oshima, Yuichi Oshima
Format:	Article
Language:	English
Published:	Taylor & Francis Group 2025-12-01
Subjects:	β-Ga2O3 cantilever air bridge MEMS crystallographic etching HCl gas etching
Online Access:	https://www.tandfonline.com/doi/10.1080/27660400.2025.2554046