X -Band Harmonic-Tuned High Power and Efficiency GaN HEMT Oscillator IC

An X-band harmonic-tuned oscillator integrated circuit (IC) with high power and efficiency is presented, utilizing gallium nitride (GaN) high electron mobility transistor (HEMT). It consists of a feedback and load network to provide optimal harmonic impedances while satisfying the oscillation condit...

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Bibliographic Details
Published in:IEEE Access
Main Authors: Yeongmin Jang, Wonseok Choe, Minchul Kim, Jinho Jeong
Format: Article
Language:English
Published: IEEE 2024-01-01
Subjects:
GaN HEMT
high efficiency
microwave oscillator
phase noise
power oscillator
Online Access:https://ieeexplore.ieee.org/document/10623646/

Internet

https://ieeexplore.ieee.org/document/10623646/

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