Compact Physics Hot-Carrier Degradation Model Valid over a Wide Bias Range

We develop a compact physics model for hot-carrier degradation (HCD) that is valid over a wide range of gate and drain voltages (<inline-formula><math xmlns="http://www.w3.org/1998/Math/MathML" display="inline"><semantics><msub><mi>V</mi><mi...

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Bibliographic Details
Published in:Micromachines
Main Authors: Stanislav Tyaginov, Erik Bury, Alexander Grill, Zhuoqing Yu, Alexander Makarov, An De Keersgieter, Mikhail Vexler, Michiel Vandemaele, Runsheng Wang, Alessio Spessot, Adrian Chasin, Ben Kaczer
Format: Article
Language:English
Published: MDPI AG 2023-10-01
Subjects:
hot-carrier degradation
compact physics model
secondary carriers
impact ionization
interface traps
carrier transport
Online Access:https://www.mdpi.com/2072-666X/14/11/2018

Internet

https://www.mdpi.com/2072-666X/14/11/2018

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